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tdi-ccd image sensors operating the back-thinned ccd in tdi mode delivers high sensitivity. s10201-04-01 s10200-02-01 s10202-08-01 s10202-16-01 www.hamamatsu.com 1 tdi-ccd image sensers capture clear and bright images even under low-light-level conditions. during tdi (time delay integra- tion) mode, the ccd captures an image of a moving object while transferring integrated signal charges synchronously with the object movement. this operation mode dramatically boosts sensitivity to high levels even when capturing fast moving objects. our new tdi-ccd uses the back-thinned structure to achieve even higher quantum ef ciency over a wide spectral range from uv to near ir region (200 to 1100 nm). tdi mode in fft-ccd, signal charges in each line are vertically transferred during charge readout. tdi mode synchronizes this vertical transfer timing with the movement of the object, so that signal charges are integrated a number of times equal to the number of vertical stages of the ccd pixels. in the tdi mode, the signal charges must be transferred in the same direction at the same speed as those of the object to be imaged. these speeds are expressed by the following equation: v = f d v: object moving speed, charge transfer speed, f: vertical transfer frequency, d: pixel siz e in the right gure, when the rst stage charges are transferred to the second stage, an additional charges are produced in the second stage by photoelectric conversion and accumulated. when this operation is continuously repeated until reaching the last stage m (the number of vertical stages), signal charg- es which are m times greater than the initial charges are accu- mulated. since the signal charges on each line are output from the ccd horizontal shift register, a two-dimensional image can be continuously acquired. in this way the tdi mode achieves sensitivity which is m times higher than linear image sensors (s/n is improved m times). the tdi mode also improves sensitivity variations compared to frame mode operation. schematic diagram showing integrated exposure by tdi mode time1 time2 time3 first stage last stage m charge transfer object movement charge kmpdc0139ea selection guide type no. number of total pixels (h v) number of effective pixels (h v) number of ports pixel rate (mhz/port) line rate (khz) vertical transfer applicable * 1 camera s10200-02-01 * 2 * 3 1040 128 1024 128 2 30 50 bi-directional - s10201-04-01 * 2 * 3 2080 128 2048 128 4 c10000-801 s10202-08-01 4160 128 4096 128 8 - s10202-16-01 4224 128 4096 128 16 100 - * 1: the c10000 series cameras are products manufactured by hamamatsu photonics, system division (refer to page 14). * 2: temporary window type (s10200-02n-01, s10201-04n-01) is also available upon request. * 3: light-shield mask type (s10200-02m-01, s10201-04m-01) for horizontal register shielding is also available upon request [see dev ice structure (p.7)]. the light-shield mask?s aperture size in the vertical direction is 96 pixels. the effect of the light-shield mask may vary depending on the wavelength of the light source in use and the incident angle of light. sequential imaging of high-speed moving samples semiconductor inspection inspection tasks on electronic parts production line flow cytometery applications tdi mode gives high sensitivity high-speed, continuous image acquisition back-thinned structure ensures high sensitivity from uv to near ir multiple ports for high-speed line rate low noise features
tdi-ccd image sensors s10200-02-01, s10201-04-01, s10202-08-01, s10202-16-01 2 structure parameter specification pixel size (h v) 12 12 m tdi stage 128 anti-blooming fw 100 (min.) vertical clock 3 phases horizontal clock 2 phases output circuit three-stage mosfet source follower package ceramic dip (refer to dimensional outlines) window quartz glass * 4 * 4: resin sealing parameter symbol min. typ. max. unit operating temperature * 5 * 6 * 7 topr -50 - 60 c storage temperature * 7 tstg -50 - 70 c output transistor drain voltage v od -0.5 - 25 v reset drain voltage v rd -0.5 - 18 v overflow drain voltage v ofd -0.5 - 18 v overflow gate voltage v ofg -10 - 15 v summing gate voltage v sg -10 - 15 v output gate voltage v og -10 - 15 v reset gate voltage v rg -10 - 15 v transfer gate voltage v tg -10 - 15 v vertical clock voltage v p1v, v p2v , v p3v -8 - +8 v horizontal clock voltage v p1h , v p2h -10 - 15 v * 5: package temperature * 6: the chip temperature may increase due to heating in high-speed op eration. we recommend taking measures to dissipate heat as nee ded. * 7: no condensation note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum ratings. absolute maximum ratings (ta=25 c) parameter symbol min. typ. max. unit output transistor drain voltage v od 12 15 18 v reset drain voltage v rd 12 14 16 v output gate voltage v og 468v substrate voltage v dgnd , v agnd -0-v overflow drain voltage v ofd 7 9 11 v overflow gate voltage v ofg 357v vertical shift register clock voltage high v p1vh , v p2vh , v p3vh 468 v low v p1vl , v p2vl , v p3vl -6 -5 -4 horizontal shift register clock voltage high v p1hh , v p2hh 468 v low v p1hl , v p2hl -6 -5 -4 summing gate voltage high v sgh 468 v low v shl -6 -5 -4 reset gate voltage high v rgh 789 v low v rgl -6 0 - transfer gate voltage high v tgh 468 v low v tgl -6 -5 -4 external load resistance r l 2.0 2.2 2.4 k operating conditions (tdi mode, ta=25 c)
tdi-ccd image sensors s10200-02-01, s10201-04-01, s10202-08-01, s10202-16-01 3 parameter symbol min. typ. max. unit signal output frequency fc - 30 40 mhz vertical shift register capacitance s10200-02-01 c p1v, c p2v , c p3v - 250 - pf s10201-04-01 - 400 - s10202-08-01/-16-01 - 650 - line rate s10200-02-01 lr -50- khz s10201-04-01 - 50 - s10202-08-01 - 50 - s10202-16-01 - 100 - horizontal shift register capacitance s10200-02-01 c p1h , c p2h -50- pf s10201-04-01 - 90 - s10202-08-01/-16-01 -90- transfer gate capacitance s10200-02-01 c tg -40- pf s10201-04-01 - 60 - s10202-08-01/-16-01 - 100 - summing gate capacitance s10200-02-01 c sg -20- pf s10201-04-01 - 40 - s10202-08-01/-16-01 -40- reset gate capacitance s10200-02-01 c rg -20- pf s10201-04-01 - 40 - s10202-08-01/-16-01 -40- charge transfer efficiency* 8 cte 0.99995 0.99999 - - dc output level* 9 vout - 11 - v output impedance* 10 zo - 150 - output mosfet supply current/node ido - 8 12 ma power consumption* 9 * 10 p - 120 - mw/port * 8: charge transfer efficiency per pixel, measured at half of the full well capacity * 9: the values depend on the load resistance. (v od =15 v, load resistance=2.2 k ) * 10: power consumption of the on-chip amplifier plus load resistance electrical characteristics [ta=25 c, fc=30 mhz, typ. value in operating conditions table (p.2), unless otherwise noted] parameter symbol min. typ. max. unit saturation output voltage vsat - fw sv - v full well capacity * 11 fw 80 100 120 ke - ccd node sensitivity sv 8.5 9.5 10.5 v/e - dark current * 11 * 12 ds - 30 100 e - /pixel readout noise nr - 35 45 e - rms dynamic range dr 1777 2857 - - photoresponse nonuniformity * 13 prnu - 3 10 % spectral response range - 200 to 1100 - nm * 11: tdi mode * 12: line rate 50 khz, accumulated dark signal after 128-stage transfer * 13: measured at half of the full well capacity, using led light (peak emission wavelength: 660 nm), in tdi mode fixed pattern noise (peak to peak) signal 100 [%] photoresponse nonuniformity (prnu) = electrical and optical characteristics [ta=25 c, fc=30 mhz, typ. value in operating conditions table (p.2), unless otherwise n oted]
tdi-ccd image sensors s10200-02-01, s10201-04-01, s10202-08-01, s10202-16-01 4 spectral response (without window) * 14 kmpdb0268eb kmpdb0269ec wavelength (nm) photosensitivity (v/j cm 2 ) 0 1000 2000 3000 4000 5000 200 400 600 900 800 1000 300 500 700 1100 7000 6000 (typ. ta=25 c) wavelength (nm) quantum efficiency (%) (typ. ta=25 c) 0 10 20 30 40 50 60 70 80 90 200 300 400 500 600 700 800 900 1000 1100 100 (typ. ta=25 c) back-thinned ccd s10200-02-01 s10201-04-01 s10202-08-01 s10202-16-01 front-illuminated ccd * 14: spectral response with quartz window is decreased according to the spectral transmittance characteristics of window material. spectral transmittance characteristics of window material kmpdb0303ea wavelength (nm) (typ. ta=25 c) transmittance (%) 0 100 80 60 40 20 300 400 200 500 600 700 800 900 1000
tdi-ccd image sensors s10200-02-01, s10201-04-01, s10202-08-01, s10202-16-01 5 tgb p3v p2v p1v tga rg rd od agnd og sg p2h p1h osa1 osa2 osb1 osb2 ofd ofg dgnd b port side 512 pixels a port side bidirectional transfer 128 pixels sensor structure kapdc0251ea s10200-02-01 tgb p3v p2v p1v tga rg rd od agnd og sg p2h p1h osa1 osa2 osb1 osb2 osa3 osb3 osa4 osb4 ofd ofg dgnd b port side 512 pixels a port side bidirectional transfer 128 pixels kmpdc0260ea s10201-04-01
tdi-ccd image sensors s10200-02-01, s10201-04-01, s10202-08-01, s10202-16-01 6 tgb p3v p2v p1v tga rg rd od agnd og sg p2h p1h osa1 osa2 osb1 osb2 osa3 osb3 osa4 osb4 ofd ofg dgnd b port side 512 pixels a port side osa5 osb5 osa8 osb8 bidirectional transfer 128 pixels kmpdc0261ea s10202-08-01 tgb p3v p2v p1v tga rg rd od agnd og sg p2h p1h osa1 osa2 osb1 osb2 osa3 osb3 osa4 osb4 ofd ofg dgnd b port side 256 pixels a port side osa5 osb5 osa16 osb16 osa6 osb6 osa7 osb7 osa8 osb8 osa9 osb9 osa15 osb15 bidirectional transfer 128 pixels kmpdc0262ea s10202-16-01
tdi-ccd image sensors s10200-02-01, s10201-04-01, s10202-08-01, s10202-16-01 7 note: when viewed from the direction of the incident light, the horizontal shift register is covered with a thick silicon layer (dead layer). however, long-wavelength light passes through the silicon dead layer and may possibly be detected by the horizontal shift register. to p revent this, provide light shield on that area as needed. osb6 osb7 osb8 osa6 osa7 osa8 thinning v=128 h=512 8 (number of ports) thinning osa1 osa2 osa3 osb1 osb2 osb3 8 blank pixels 512 pixels 128 tdi stages kmpdc0252eb device structure (typical example: s10202-08-01, conceptual drawing of top view)
tdi-ccd image sensors s10200-02-01, s10201-04-01, s10202-08-01, s10202-16-01 8 timing chart osb rgb h l h l h l p2hb, sgb p1hb h l tgb h l p1v h l p2v h l p3v h l tga h l p1ha h l p2ha, sga h l rga osa s510 s254 s511 s255 d1 tprr, tpwr, tpfr d2 d3..d8, s1..s509 d3..d8, s1..s253 s512 : s10200-02-01, s10201-04-01, s10202-08-01 s256 : s10202-16-01 tprs, tpws, tpfs tprh, tpwh, tpfh tovr 518 262 519 263 520 264 s10200-02-01, s10201-04-01, s10202-08-01: s10202-16-01: 12 3 4 ..517 3 4 ..261 tprv, tpwv, tpfv tovrv tovrv kmpdc0253eh b port side readout osb rgb p2hb, sgb p1hb p1ha p2ha, sga rga osa s510 s254 s511 s255 d1 d2 d3..d8, s1..s509 d3..d8, s1..s253 s512 s256 518 262 519 263 3 3 4..517 4..261 1 tprv, tpwv, tpfv tprh, tpwh, tpfh tovrv tovrv 2 h l h l h l tgb h l p1v h l p2v h l p3v h l tga h l h l h l h l tprs, tpws, tpfs tprr, tpwr, tpfr tovr 520 264 s10200-02-01, s10201-04-01, s10202-08-01: s10202-16-01: : s10200-02-01, s10201-04-01, s10202-08-01 : s10202-16-01 kmpdc0254eg a port side readout
tdi-ccd image sensors s10200-02-01, s10201-04-01, s10202-08-01, s10202-16-01 9 parameter symbol min. typ. max. unit p1v, 2v, 3v, tg pulse width tpwv 120 770 - ns rise and fall times tprv, tpfv 2 10 - ns overlap time tovrv 30 300 - ns p1h, p2h pulse width * 15 tpwh 12.5 16.5 - ns rise and fall times * 15 tprh, tpfh 3 6 - ns duty ratio * 15 --50-% sg pulse width tpws 12.5 16.5 - ns rise and fall times tprs, tpfs 2 4 - ns duty ratio - - 50 - % rg pulse width tpwr 5 6 - ns rise and fall times tprr, tpfr 1 2 - ns tg - p1h overlap time tovr 30 1000 - ns * 15: symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude. * distance from upper surface of window to photosensitive surface photosensitive area 12.288 window glass 23.84 0.1 0.457 0.05 1.27 0.1 27.94 0.33 30.48 0.35 40 21 1 index mark 20 10.16 0.25 3 0.1 9.91 0.25 2.5 0.1 photosensitive area 1.536 3.44 0.35 1.48 0.15 * 0.25 +0.05 -0.03 2.84 0.3 c0.5 window glass 9.66 0.1 kmpda0218ec s10200-02-01 dimensional outlines (unit: mm)
tdi-ccd image sensors s10200-02-01, s10201-04-01, s10202-08-01, s10202-16-01 10 * distance from upper surface of window to photosensitive surface photosensitive area 24.576 window glass 33 0.1 0.457 0.05 1.27 0.1 38.1 0.43 40.64 0.45 40 21 1 index mark 20 10.16 0.25 3 0.1 window glass 9.66 0.1 9.91 0.25 2.5 0.1 photosensitive area 1.536 3.44 0.35 1.48 0.15 * 0.25 +0.05 -0.03 2.84 0.3 c0.5 kmpda0219ec s10201-04-01 * distance from upper surface of window to photosensitive surface photosensitive area 49.152 100 51 50 window glass 55 0.1 63.5 0.64 66.04 0.66 9.91 0.25 window glass 6.5 0.1 2.5 0.25 photosensitive area 1.536 1 index mark 3 0.3 0.42 0.25 1.27 0.13 0.8 0.05 2.42 0.2 * 2.4 0.24 3.8 0.38 0.25 +0.05 -0.03 10.16 0.25 c0.5 kmpda0220ec s10202-08-01, s10202-16-01
tdi-ccd image sensors s10200-02-01, s10201-04-01, s10202-08-01, s10202-16-01 11 s10200-02-01 s10201-04-01 pin no. symbol function remark pin no. symbol function remark 1 p2v ccd vertical register clock-2 1 p2v ccd vertical register clock-2 2 p3v ccd vertical register clock-3 2 p3v ccd vertical register clock-3 3 p1v ccd vertical register clock-1 3 p1v ccd vertical register clock-1 4 tga transfer gate-a 4 tga transfer gate-a 5 ssd digital gnd gnd 5 ssd digital gnd gnd 6 nc no connection 6 osa1 output transistor source-a1 r l =2.2 k 7 ssa analog gnd gnd 7 ssa analog gnd gnd 8 osa1 output transistor source-a 1 r l =2.2 k 8 osa2 output transistor source-a2 r l =2.2 k 9 od1 output drain-1 +15 v 9 od1 output drain-1 +15 v 10 osa2 output transistor source-a 2 r l =2.2 k 10 osa3 output transistor source-a3 r l =2.2 k 11 nc no connection 11 od3 output drain-3 +15 v 12 nc no connection 12 osa4 output transistor source-a4 r l =2.2 k 13 og output gate +6 v 13 og output gate +6 v 14 rd reset drain +14 v 14 rd reset drain +14 v 15 ofd overflow drain +9 v 15 ofd overflow drain +9 v 16 ssd digital gnd gnd 16 ssd digital gnd gnd 17 rga reset gate-a 17 rga reset gate-a 18 sga summing gate-a 18 sga summing gate-a 19 p1ha ccd horizontal register-a clock-1 19 p1ha ccd horizontal register-a clock-1 20 p2ha ccd horizontal register-a clock-2 20 p2ha ccd horizontal register-a clock-2 21 p2hb ccd horizontal register-b clock-2 21 p2hb ccd horizontal register-b clock-2 22 p1hb ccd horizontal register-b clock-1 22 p1hb ccd horizontal register-b clock-1 23 sgb summing gate-b 23 sgb summing gate-b 24 rgb reset gate-b 24 rgb reset gate-b 25 ssd digital gnd gnd 25 ssd digital gnd gnd 26 ofg overflow gate +5 v 26 ofg overflow gate +5 v 27 rd reset drain +14 v 27 rd reset drain +14 v 28 og output gate +6 v 28 og output gate +6 v 29 nc no connection 29 osb4 output transistor source-b4 r l =2.2 k 30 nc no connection 30 od4 output drain-4 +15 v 31 osb2 output transistor source-b2 r l =2.2 k 31 osb3 output transistor source-b3 r l =2.2 k 32 od2 output drain-2 +15 v 32 od2 output drain-2 +15 v 33 osb1 output transistor source-b1 r l =2.2 k 33 osb2 output transistor source-b2 r l =2.2 k 34 ssa analog gnd gnd 34 ssa analog gnd gnd 35 nc no connection 35 osb1 output transistor source-b1 r l =2.2 k 36 ssd digital gnd gnd 36 ssd digital gnd gnd 37 tgb transfer gate-b 37 tgb transfer gate-b 38 p1v ccd vertical register clock-1 38 p1v ccd vertical register clock-1 39 p3v ccd vertical register clock-3 39 p3v ccd vertical register clock-3 40 p2v ccd vertical register clock-2 40 p2v ccd vertical register clock-2 pin connections
tdi-ccd image sensors s10200-02-01, s10201-04-01, s10202-08-01, s10202-16-01 12 s10202-08-01 pin no. symbol function remark pin no. symbol function remark 1 p1ha1 ccd horizontal register-a1 clock-1 51 p1hb2 ccd horizontal register-b2 clock-1 2 p2ha1 ccd horizontal register-a1 clock-2 52 p2hb2 ccd horizontal register-b2 clock-2 3 sga1 summing gate-a1 53 sgb2 summing gate-b2 4 rga1 reset gate-a1 54 rgb2 reset gate-b2 5 ssd digital gnd gnd 55 ssd digital gnd gnd 6 ssa analog gnd gnd 56 ssa analog gnd gnd 7 ofg overflow gate +6 v 57 ofg overflow gate +5 v 8 osa1 output transistor source-a1 r l =2.2 k 58 nc no connection 9 ofd overflow drain +9 v 59 ofd overflow drain +9 v 10 nc no connection 60 osb8 output transistor source-b8 r l =2.2 k 11 rd reset drain +14 v 61 rd reset drain +14 v 12 osa2 output transistor source-a2 r l =2.2 k 62 nc no connection 13 og output gate +6 v 63 og output gate +6 v 14 nc no connection 64 osb7 output transistor source-b7 r l =2.2 k 15 od1 output drain-1 +15 v 65 nc no connection 16 osa3 output transistor source-a3 r l =2.2 k 66 nc no connection 17 nc no connection 67 od8 output drain-8 +15 v 18 nc no connection 68 osb6 output transistor source-b6 r l =2.2 k 19 od3 output drain-3 +15 v 69 nc no connection 20 osa4 output transistor source-a4 r l =2.2 k 70 nc no connection 21 nc no connection 71 od6 output drain-6 +15 v 22 nc no connection 72 osb5 output transistor source-b5 r l =2.2 k 23 ssd digital gnd gnd 73 ssd digital gnd gnd 24 tga transfer gate-a 74 p1v ccd vertical register clock-1 25 p2v ccd vertical register clock-2 75 p3v ccd vertical register clock-3 26 p3v ccd vertical register clock-3 76 p2v ccd vertical register clock-2 27 p1v ccd vertical register clock-1 77 tgb transfer gate-b 28 ssd digital gnd gnd 78 ssd digital gnd gnd 29 osa5 output transistor source-a5 r l =2.2 k 79 nc no connection 30 od5 output drain-5 +15 v 80 nc no connection 31 nc no connection 81 osb4 output transistor source-b4 r l =2.2 k 32 nc no connection 82 od4 output drain-4 +15 v 33 osa6 output transistor source-a6 r l =2.2 k 83 nc no connection 34 od7 output drain-7 +15 v 84 nc no connection 35 nc no connection 85 osb3 output transistor source-b3 r l =2.2 k 36 nc no connection 86 od2 output drain-2 +15 v 37 osa7 output transistor source-a7 r l =2.2 k 87 nc no connection 38 og output gate +6 v 88 og output gate +6 v 39 nc no connection 89 osb2 output transistor source-b2 r l =2.2 k 40 rd reset drain +14 v 90 rd reset drain +14 v 41 osa8 output transistor source-a8 r l =2.2 k 91 nc no connection 42 ofd overflow drain +9 v 92 ofd overflow drain +9 v 43 nc no connection 93 osb1 output transistor source-b1 r l =2.2 k 44 ofg overflow gate +5 v 94 ofg overflow gate +5 v 45 ssa analog gnd gnd 95 ssa analog gnd gnd 46 ssd digital gnd gnd 96 ssd digital gnd gnd 47 rga2 reset gate-a2 97 rgb1 reset gate-b1 48 sga2 summing gate-a2 98 sgb1 summing gate-b1 49 p2ha2 ccd horizontal register-a2 clock-2 99 p2hb1 ccd horizontal register-b1 clock-2 50 p1ha2 ccd horizontal register-a2 clock-1 100 p1hb1 ccd horizontal register-b1 clock-1
tdi-ccd image sensors s10200-02-01, s10201-04-01, s10202-08-01, s10202-16-01 13 s10202-16-01 pin no. symbol function remark pin no. symbol function remark 1 p1ha1 ccd horizontal register-a1 clock-1 51 p1hb2 ccd horizontal register-b2 clock-1 2 p2ha1 ccd horizontal register-a1 clock-2 52 p2hb2 ccd horizontal register-b2 clock-2 3 sga1 summing gate-a1 53 sgb2 summing gate-b2 4 rga1 reset gate-a1 54 rgb2 reset gate-b2 5 ssd digital gnd gnd 55 ssd digital gnd gnd 6 ssa analog gnd gnd 56 ssa analog gnd gnd 7 ofg overflow gate +5 v 57 ofg overflow gate +5 v 8 osa1 output transistor source-a1 r l =2.2 k 58 osb16 output transistor source-b16 r l =2.2 k 9 ofd overflow drain +9 v 59 ofd overflow drain +9 v 10 osa2 output transistor source-a2 r l =2.2 k 60 osb15 output transistor source-b15 r l =2.2 k 11 rd reset drain +14 v 61 rd reset drain +14 v 12 osa3 output transistor source-a3 r l =2.2 k 62 osb14 output transistor source-b14 r l =2.2 k 13 og output gate +6 v 63 og output gate +6 v 14 osa4 output transistor source-a4 r l =2.2 k 64 osb13 output transistor source-b13 r l =2.2 k 15 od1 output drain-1 +15 v 65 od16 output drain-16 +15 v 16 osa5 output transistor source-a5 r l =2.2 k 66 osb12 output transistor source-b12 r l =2.2 k 17 od2 output drain-2 +15 v 67 od15 output drain-15 +15 v 18 osa6 output transistor source-a6 r l =2.2 k 68 osb11 output transistor source-b11 r l =2.2 k 19 od5 output drain-5 +15 v 69 od12 output drain-12 +15 v 20 osa7 output transistor source-a7 r l =2.2 k 70 osb10 output transistor source-b10 r l =2.2 k 21 od6 output drain-6 +15 v 71 od11 output drain-11 +15 v 22 osa8 output transistor source-a8 r l =2.2 k 72 osb9 output transistor source-b9 r l =2.2 k 23 ssd digital gnd gnd 73 ssd digital gnd gnd 24 tga transfer gate-a 74 p1v ccd vertical register clock-1 25 p2v ccd vertical register clock-2 75 p3v ccd vertical register clock-3 26 p3v ccd vertical register clock-3 76 p2v ccd vertical register clock-2 27 p1v ccd vertical register clock-1 77 tgb transfer gate-b 28 ssd digital gnd gnd 78 ssd digital gnd gnd 29 osa9 output transistor source-a9 r l =2.2 k 79 osb8 output transistor source-b8 r l =2.2 k 30 od9 output drain-9 +15 v 80 od8 output drain-8 +15 v 31 osa10 output transistor source-a10 r l =2.2 k 81 osb7 output transistor source-b7 r l =2.2 k 32 od10 output drain-10 +15 v 82 od7 output drain-7 +15 v 33 osa11 output transistor source-a11 r l =2.2 k 83 osb6 output transistor source-b6 r l =2.2 k 34 od13 output drain-13 +15 v 84 od4 output drain-4 +15 v 35 osa12 output transistor source-a12 r l =2.2 k 85 osb5 output transistor source-b5 r l =2.2 k 36 od14 output drain-14 +15 v 86 od3 output drain-3 +15 v 37 osa13 output transistor source-a13 r l =2.2 k 87 osb4 output transistor source-b4 r l =2.2 k 38 og output gate +6 v 88 og output gate +6 v 39 osa14 output transistor source-a14 r l =2.2 k 89 osb3 output transistor source-b3 r l =2.2 k 40 rd reset drain +14 v 90 rd reset drain +14 v 41 osa15 output transistor source-a15 r l =2.2 k 91 osb2 output transistor source-b2 r l =2.2 k 42 ofd overflow drain +9 v 92 ofd overflow drain +9 v 43 osa16 output transistor source-a16 r l =2.2 k 93 osb1 output transistor source-b1 r l =2.2 k 44 ofg overflow gate +5 v 94 ofg overflow gate +5 v 45 ssa analog gnd gnd 95 ssa analog gnd gnd 46 ssd digital gnd gnd 96 ssd digital gnd gnd 47 rga2 reset gate-a2 97 rgb1 reset gate-b1 48 sga2 summing gate-a2 98 sgb1 summing gate-b1 49 p2ha2 ccd horizontal register-a2 clock-2 99 p2hb1 ccd horizontal register-b1 clock-2 50 p1ha2 ccd horizontal register-a2 clock-1 100 p1hb1 ccd horizontal register-b1 clock-1
cat. no. kmpd1098e09 jul. 2015 dn information described in this material is current as of july, 2015. 14 tdi-ccd image sensors s10200-02-01, s10201-04-01, s10202-08-01, s10202-16-01 www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, bridgewater, n.j. 08807, u.s.a., telephone: (1) 908-231-0960, fax: (1) 908-23 1-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: torshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-5 09-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese (milano), italy, telephone: (39) 02-93581733 , fax: (39) 02-93581741 china: hamamatsu photonics (china) co., ltd.: b1201, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020 , china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice due to improvements or other reasons. this document has been carefully prepared and the information contained is believed to be accurate. in rare cases, however, there may be inaccuracies such as text errors. before using these products, always contact us for the delivery specification sheet to check the latest specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovere d and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. electrical and optical characteristics listed in the datasheet are the values when used under typical operating conditions. we recommend using the product under typical operating conditions. product characteristics vary with operating conditions. operating conditions speci ed in the datasheet show the adjustment range. they must be adjusted within the speci ed range. ? ? handle these sensors with bare hands or wearing cotton gloves. in addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. ? ? avoid directly placing these sensors on a work-desk, etc. that may carry an electrostatic charge. ? ? provide ground lines or ground connection with the work- oor, work-desk and work-bench to allow static electricity to discharge. ? ? ground the tools used to handle these sensors, such as tweezers and soldering irons. it is not always necessary to provide all the electrostatic measur es stated above. implement these measures according to the am ount of damage that occurs. precautions (electrostatic countermeasures) the tdi camera c10000 series is useful in a wide range of imaging applications that require both high speed and high sensitivity, including in-line monitoring and inspection. tdi camera c10000 series c10000-801 (with s10201-04-01) product information www.hamamatsu.com/all/en/c10000-801.html related information ? disclamer ? image sensors/precautions precautions www.hamamatsu.com/sp/ssd/doc_en.html

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